FILM CRYSTALLIZATION METHOD

申请公布号：

KR20120083332(A)

申请号：

KR20127006655

申请日期：

2010.09.14

申请公布日期：

2012.07.25

申请人：

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES

发明人：

CAYRON CYRIL

分类号：

C30B1/12;C30B29/06;H01L31/0224

主分类号：

C30B1/12

摘要：

<p>The transfer of the structure of a crystal (3) having an amorphous or crystal structure to a thin layer (1) with a different structure can be achieved by the combination of a pressing (6) and a heating (7) to apply the layer onto the crystal and anneal it to crystallize it. Characteristically, wedges (5) are placed at the edges to flex the layer and give rise to cracking of the assembly and releasing the layer when the pressure ceases, which eliminates the complicated methods for withdrawing the crystal (3) or even destroying it, enables the use of the crystal (3) in several layers to be crystallized, allows a good manufacturing rate and reduces costs.</p>