NIOBIUM NITRIDE AND METHOD FOR PRODUCING SAME, NIOBIUM NITRIDE-CONTAINING FILM AND METHOD FOR PRODUCING SAME, SEMICONDUCTOR, SEMICONDUCTOR DEVICE, PHOTOCATALYST, HYDROGEN GENERATION DEVICE, AND ENERGY SYSTEM
- 申请公布号：
- WO2013084447(A1)
- 申请号：
- WO2012JP07639
- 申请日期：
- 2012.11.28
- 申请公布日期：
- 2013.06.13
- 申请人：
- PANASONIC CORPORATION
- 发明人：
- SUZUKI, TAKAHIRO;NOMURA, TAKAIKI;KUROHA, TOMOHIRO;MIYATA, NOBUHIRO;TAMURA, SATORU;TOKUHIRO, KENICHI;HATO, KAZUHITO
- 分类号：
- C01B21/06;B01J27/24;B01J35/02;C01B3/04
- 主分类号：
- C01B21/06
- 摘要：
- The present invention is a niobium nitride having a composition represented by the composition formula Nb3N5, wherein the valence state of the structural element Nb is substantially +5. This method for producing the niobium nitride comprises a nitriding step whereby an organic niobium compound and a nitrogen compound gas are reacted and the organic niobium compound is converted to a nitride.
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