SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- 申请公布号：
- KR20130070929(A)
- 申请号：
- KR20110138204
- 申请日期：
- 2011.12.20
- 申请公布日期：
- 2013.06.28
- 申请人：
- SK HYNIX INC.
- 发明人：
- KANG, JEONG KYU
- 分类号：
- G11C16/34;G11C16/12
- 主分类号：
- G11C16/34
- 摘要：
- PURPOSE: A semiconductor memory device and an operation method thereof are provided to improve the properties of program disturbance by changing a channel boosting level of a channel region in a program prohibition cell. CONSTITUTION: It is determined whether or not a selected word line is a first word line adjacent to a drain selection line or a source selection line(S320). A program loop is performed for storing data in memory cells of the first word line(S330). It is checked whether a threshold voltage of the memory cell is increased to a target level, and a program verification operation is performed to determine the completion of a program operation(S335). It confirms whether the word line in which the program loop is performed is the final word line(S340). [Reference numerals] (AA) Start; (BB,DD,FF) No; (CC,EE,GG) Yes; (HH) End; (S310) Select a first word line; (S320) Edge word line?; (S331) Execute a program operation(channel of a program prohibition cell : Vpre1); (S333) Execute the program operation(channel of the program prohibition cell : Vpre2); (S335) Complete the program?; (S337) Change the voltage of the program; (S340) Last word line?; (S350) Select a next word line
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