SEMICONDUCTOR DEVICE

申请公布号：

JP2013179281(A)

申请号：

JP20130015292

申请日期：

2013.01.30

申请公布日期：

2013.09.09

申请人：

SEMICONDUCTOR ENERGY LAB CO LTD

发明人：

YAMAZAKI SHUNPEI;KOYAMA JUN;SAITO AKIRA;IKEYAMA TERUMASA

分类号：

H01L29/786;G02F1/1368;H01L21/28;H01L21/336;H01L29/41;H01L51/50;H05B33/22

主分类号：

H01L29/786

摘要：

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which stabilizes electrical characteristics of a transistor using an oxide semiconductor film.SOLUTION: A semiconductor device comprises: a gate electrode layer provided on a substrate; a gate insulation film provided on the gate electrode layer; an oxide semiconductor film provided on the gate insulation film; a drain electrode layer provided on the oxide semiconductor film so as to overlap the gate electrode; and a source electrode layer provided so as to cover an outer peripheral end of the oxide semiconductor film. An outer peripheral end of the drain electrode layer is located inside an outer peripheral end of the gate electrode layer.