VIA FORMATION FOR CROSS-POINT MEMORY

申请公布号：

US2013235655(A1)

申请号：

US201313870434

申请日期：

2013.04.25

申请公布日期：

2013.09.12

申请人：

MICRON TECHNOLOGY, INC.

发明人：

TANG STEPHEN

分类号：

H01L45/00;G11C13/00;H01L23/48

主分类号：

H01L45/00

摘要：

Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.