Methods to Improve Leakage for ZrO2 Based High K MIM Capacitor
- 申请公布号：
- US2014187015(A1)
- 申请号：
- US201213727898
- 申请日期：
- 2012.12.27
- 申请公布日期：
- 2014.07.03
- 申请人：
- INTERMOLECULAR, INC. ;ELPIDA MEMORY, INC.
- 发明人：
- Rui Xiangxin;Horikawa Mitsuhiro;Ode Hiroyuki;Ramani Karthik
- 分类号：
- H01L49/02
- 主分类号：
- H01L49/02
- 地址：
- San Jose CA US
- 摘要：
- A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer.
- 主权项：
- 1. A method for forming a capacitor stack, the method comprising:
forming a first electrode layer above a substrate; forming a first blocking layer on the first electrode layer,
wherein the first blocking layer comprises a first metal oxide,wherein the first blocking layer has a thickness between 1 A and 15 A, andwherein the first metal oxide is less than 30% crystalline and has a resistivity greater than 0.01 ohm-cm; forming a dielectric layer above the first blocking layer,
wherein the dielectric layer is substantially all crystalline; forming a second blocking layer on the dielectric layer,
wherein the second blocking layer comprises a second metal oxide,wherein the second blocking layer has a thickness between 1 A and 15 A, andwherein the second metal oxide is less than 30% crystalline and has a resistivity greater than 0.01 ohm-cm; and forming a second electrode layer above the dielectric layer.
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