Amplifier circuit and image sensor using amplifier circuit
- 申请公布号：
- US9077288(B2)
- 申请号：
- US201414278745
- 申请日期：
- 2014.05.15
- 申请公布日期：
- 2015.07.07
- 申请人：
- NLT TECHNOLOGIES, LTD.
- 发明人：
- Sekine Hiroyuki
- 分类号：
- G01T1/20;H03F3/16;H04N5/32;H04N5/3745;H01L27/146
- 主分类号：
- G01T1/20
- 代理机构：
- Young & Thompson
- 代理人：
- Young & Thompson
- 地址：
- Kanagawa JP
- 摘要：
- There is a problem that in an image sensor including an amplifier in each pixel, when a thin-film semiconductor is used as a transistor constituting the amplifier, voltage continues to be applied between source and gate of the transistor and thereby a threshold voltage value of the transistor varies, resulting in a variation of signal voltage. To solve the problem, a thin-film transistor formed with an oxide semiconductor is used as the transistor constituting the amplifier, and during a period other than a period of outputting an output of the amplifier, source potential of the transistor is controlled to be equal to drain potential thereof.
- 主权项：
- 1. An amplifier circuit outputting current in accordance with voltage applied to an input terminal thereof, the amplifier circuit comprising:
at least one transistor including a gate terminal connected to the input terminal and a source terminal connected to an output terminal of the amplifier circuit, wherein the amplifier circuit performs an operation including an output period of outputting a signal and a stop period of outputting no signal, wherein during the stop period, a controller controls potential of the source terminal of the transistor to be equal to potential of a drain terminal of the transistor and potential of the drain terminal of the transistor is always higher than potential of the gate terminal thereof.
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