Semiconductor device and semiconductor integrated circuit using the same
- 申请公布号：
- US7808045(B2)
- 申请号：
- US20100767548
- 申请日期：
- 2010.04.26
- 申请公布日期：
- 2010.10.05
- 申请人：
- RENESAS ELECTRONICS CORPORATION
- 发明人：
- KAWAHARA TAKAYUKI;YAMAOKA MASANAO
- 分类号：
- H01L23/62
- 主分类号：
- H01L23/62
- 摘要：
- The present invention provides a high speed and low power consumption LSI operable in a wide temperature range in which a MOS transistor having back gates is used specifically according to operating characteristics of a circuit. In the LSI, an FD-SOI structure having an embedded oxide film layer is used and a lower semiconductor region of the embedded oxide film layer is used as a back gate. A voltage for back gates in the logic circuits having a small load in the logic circuit block is controlled in response to activation of the block from outside of the block. Transistors, in which the gate and the back gate are connected to each other, are used for the circuit generating the back gate driving signal, and logic circuits having a heavy load such as circuit block output section, and the back gates are directly controlled according to the gate input signal.
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