SOLID STATE MEMORY UTILIZING ANALOG COMMUNICATION OF DATA VALUES

申请公布号:
EP2156304(A2)
申请号:
EP20080770154
申请日期:
2008.06.05
申请公布日期:
2010.02.24
申请人:
MICRON TECHNOLOGY, INC.
发明人:
ROOHPARVAR, FRANKIE, F.
分类号:
G06F13/00;G11C16/06
主分类号:
G06F13/00
摘要:
<p>Memory devices and bulk storage devices configured to program a memory cell to a target threshold voltage representing a data pattern of more than one bit and read the data pattern of more than one bit of the memory cell in a single read operation by generating a signal that is representative of an actual threshold voltage of the memory cell.</p>
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