DUAL WRITE WORDLINE SRAM CELL

申请公布号：

EP3143622(A1)

申请号：

EP20150730011

申请日期：

2015.06.04

申请公布日期：

2017.03.22

申请人：

Qualcomm Incorporated

发明人：

JUNG, Seong-Ook;YANG, Younghwi;SONG, Stanley Seungchul;YEAP, Choh Fei;WANG, Zhongze

分类号：

G11C8/14;G11C7/20;G11C11/412

主分类号：

G11C8/14

摘要：

A static random-access memory (SRAM) memory cell includes a pair of cross-coupled inverters and a gating transistor coupled to a first node of a first inverter of the pair of cross-coupled inverters. A gate of the gating transistor is coupled to a first wordline. The gating transistor is configured to selectively couple a bitline to the first node of the first inverter responsive to a first wordline signal. The first inverter has a second node coupled to a second wordline. The first wordline and the second wordline are each independently controllable.