SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

申请公布号:
US2016372434(A1)
申请号:
US201615257573
申请日期:
2016.09.06
申请公布日期:
2016.12.22
申请人:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人:
SHAO TUNG-LIANG;LAI YU-CHIA;TU HSIEN-MING;HUANG CHANG-PIN;YANG CHING-JUNG
分类号:
H01L23/00
主分类号:
H01L23/00
地址:
Hsinchu TW
摘要:
A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.
主权项:
1. A semiconductor device, comprising: a substrate including a first layer and a second layer over the first layer; a bump disposed over the second layer; and a molding disposed over the second layer and surrounding the bump, wherein the second layer includes a protruded portion protruding from a sidewall of the molding adjacent to a periphery of the substrate, and the molding is in contact with at least a portion of the bump.
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