ALICYCLIC PHOTOSENSITIVE POLYMER AND RESIST COMPOUND INCLUDING THEREOF AND FABRICATION METHOD THEREOF

申请公布号：: KR20010054851(A)
申请号：: KR19990055836
申请日期：: 1999.12.08
申请公布日期：: 2001.07.02
申请人：: SAMSUNG ELECTRONICS CO., LTD.
发明人：: CHOI, SANG JUN;JUNG, DONG WON;KIM, HYEON U;KWON, GI YEONG;LEE, SI HYEONG;WOO, SANG GYUN
分类号：: C08F2/04;C08F232/00;C08K5/00;C08L45/00;G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/039
主分类号：: C08F2/04
摘要：: PURPOSE: An alicyclic photosensitive polymer is provided, whose main chain comprises only a norbornene-type unit to assure the tolerance sufficiently as to a dry etching, and a resist compound including the polymer is provided to provide a good performance in a lithography process using an ArF eximer laser. CONSTITUTION: A photosensitive polymer has an average molecular weight of 3000-100000. A resist compound is provided which comprises the photosensitive polymer and a PAG(PhotoAcid Generator), and an amount of 1-15wt% PAG is included. Triarylsulfonium salts, diaryliodonium salts, sulfonates or a compound thereof can be used as the PAG. The resist compound can further include an organic base of 0.01-2.0 wt%. And, a polymer blend where at least more than two species of photosensitive polymers and a resist compound comprising the PAG are provided.