CRYSTALLINE OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
- 申请公布号：
- JP2016201555(A)
- 申请号：
- JP20160131159
- 申请日期：
- 2016.06.30
- 申请公布日期：
- 2016.12.01
- 申请人：
- FLOSFIA INC
- 发明人：
- ODA SHINYA;TOKUTA RIE;HITORA TOSHIMI
- 分类号：
- H01L21/365;C23C16/40;C23C20/08;H01L29/786
- 主分类号：
- H01L21/365
- 摘要：
- PROBLEM TO BE SOLVED: To provide a crystalline oxide semiconductor film that is excellent in electric characteristics.SOLUTION: On a crystal substrate 20 whose principal surface is a-plane, m-plane or r-plane and that has a corundum structure on the whole or a part of the principal surface, a crystalline oxide semiconductor film that contains a crystalline oxide semiconductor having a corundum structure as a main component is laminated directly or via the other layer to obtain the crystalline oxide semiconductor film that is excellent in electric characteristics. The obtained crystalline oxide semiconductor film that is excellent in electric characteristics is used for a semiconductor device.SELECTED DRAWING: Figure 1
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