SEMICONDUCTOR DEVICE

申请公布号：

JP2016207876(A)

申请号：

JP20150089006

申请日期：

2015.04.24

申请公布日期：

2016.12.08

申请人：

FUJI ELECTRIC CO LTD

发明人：

ONISHI YASUHIKO

分类号：

H01L29/786

主分类号：

H01L29/786

摘要：

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing on-resistance.SOLUTION: A semiconductor device includes, in a surface layer of a parallel pn layer 5, a source part and a drain part of a planar gate structure, which are provided at a distance from each other. A p-type base region 6 and an ntype source region 7 of the source part, and an ntype drain region 10 of the drain part are arranged in a linear planar layout which extends the same first direction x. The parallel pn layer 5 is composed of n-type drift regions 3 and p-type partition regions 4, which are alternately and repeatedly arranged one by one in the first direction x. In the source part, a trench gate structure composed of a trench 20, a second gate insulation film 21 and a second gate electrode 22 is provided. The trench 20 pierces the p-type base region 6 and the ntype source region 7 to reach the n-type drift region 3 of the parallel pn layer 5. A width d2 of the trench 20 in the first direction x is narrower than a repetition pitch Dof the n-type drift region 3 and the p-type partition region 4.SELECTED DRAWING: Figure 1