METHOD FOR DETERMINING A DETERIORATION OF POWER SEMICONDUCTOR MODULES AS WELL AS A DEVICE AND CIRCUIT ARRANGEMENT
- 申请公布号：
- WO2016124296(A1)
- 申请号：
- WO2015EP80543
- 申请日期：
- 2015.12.18
- 申请公布日期：
- 2016.08.11
- 申请人：
- SIEMENS AKTIENGESELLSCHAFT
- 发明人：
- BUTRON-CCOA, JIMMY ALEXANDER;LINDEMANN, ANDREAS;MITIC, GERHARD
- 分类号：
- G01R31/26;G01K7/01;H02M1/32
- 主分类号：
- G01R31/26
- 摘要：
- The invention relates to a method for characterizing a power semiconductor module (1), which has at least one power semiconductor component (2), comprising the following steps: determining a thermal model (4) of the power semiconductor module (1) at a reference time point; detecting a reference temperature (Tj,zth) on the basis of the thermal model (4) of the power semiconductor module (1); measuring at least one temperature-sensitive electrical parameter (TSEP) of the power semiconductor module (1) at at least one time point which is later than the reference time point during operation of the power semiconductor module (1); detecting a current temperature (Tj,tsep) of the power semiconductor module (1) from the at least one measured temperature-sensitive electrical parameter (TSEP) of the power semiconductor module (1); detecting a temperature difference (ΔΤ) between the current temperature (Tj,tsep)) and the reference temperature (Tj,zth); and determining a deterioration of the power semiconductor module (1) on the basis of the detected temperature difference (ΔΤ).
Copyright Notice © 2009-2024 传众 版权所有