Method and apparatus for suppressing metal-gate cross-diffusion in semiconductor technology
- 申请公布号：
- US9385127(B2)
- 申请号：
- US201313973616
- 申请日期：
- 2013.08.22
- 申请公布日期：
- 2016.07.05
- 申请人：
- XILINX, INC.
- 发明人：
- Lin Qi;Pan Hong-Tsz;Wu Yun;Nguyen Bang-Thu
- 分类号：
- H01L21/70;H01L27/092;H01L21/8238
- 主分类号：
- H01L21/70
- 代理人：
- Chan Gerald;Taboada Keith;Brush Robert M.
- 地址：
- San Jose CA US
- 摘要：
- An inverter includes: a PMOS comprising: a p-type source region, a p-type drain region, a p-channel region between the p-type source region and the p-type drain region, and a PMOS metal gate region; a NMOS, comprising: an n-type source region, an n-type drain region, an n-channel region between the n-type source region and the n-type drain region, and a NMOS metal gate region; an insulating layer above the p-channel region and the n-channel region, wherein the PMOS metal gate region and the NMOS metal gate region are above the insulating layer; and a gate contact between the NMOS metal gate region and the PMOS metal gate region.
- 主权项：
- 1. An inverter, comprising:
a PMOS comprising:
a p-type source region,a p-type drain region,a p-channel region between the p-type source region and the p-type drain region, anda PMOS metal gate region comprising one or more PMOS work function layers located above an insulating layer and a PMOS metal gate layer located above the one or more PMOS work function layers, the PMOS metal gate layer consisting of metal; a NMOS, comprising:
an n-type source region,an n-type drain region,an n-channel region between the n-type source region and the n-type drain region, anda NMOS metal gate region comprising one or more NMOS work function layers located above the insulating layer and a NMOS metal gate layer located above the one or more NMOS work function layers, the NMOS metal gate layer consisting of metal; the insulating layer being above the p-channel region and the n-channel region, wherein the PMOS metal gate region and the NMOS metal gate region are above the insulating layer; and a gate contact having a frusto-conical cross-section and being disposed between the NMOS metal gate region and the PMOS metal gate region.
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